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| MICROWAVE CORPORATION v03.0404 HMC365 GaAs HBT MMIC DIVIDE-BY-4, DC - 13.0 GHz Features Ultra Low SSB Phase Noise: -151 dBc/Hz Wide Bandwidth Output Power: 5 dBm Single DC Supply: +5V Small Size: 0.686 mm x 1.295 mm Typical Applications Prescaler for DC to Ku Band PLL Applications: * Satellite Communication Systems * Fiber Optic 3 FREQ. DIVIDERS - CHIP * Pt-Pt and Pt-MPt Radios * VSAT Functional Diagram General Description The HMC365 is a low noise Divide-by-4 Static Divider with InGaP GaAs HBT technology that has a small size of 0.686 mm x 1.295 mm. This device operates from DC (with a square wave input) to 13 GHz input frequency with a single +5.0V DC supply. The low additive SSB phase noise of -151 dBc/Hz at 100 kHz offset helps the user maintain good system noise performance. Electrical Specifications, TA = +25 C, 50 Ohm System, Vcc = 5V Parameter Maximum Input Frequency Minimum Input Frequency Input Power Range Sine Wave Input. [1] Fin = 1 to 10 GHz Fin = 10 to 12 GHz Fin = 12 to 13 GHz Output Power [2] Reverse Leakage SSB Phase Noise (100 kHz offset) Output Transition Time Supply Current (Icc) [2] Fin = 13 GHz Both RF Outputs Terminated Pin = 0 dBm, Fin = 6 GHz Pin = 0 dBm, Fout = 882 MHz -15 -10 -5 2 Conditions Min. 13 Typ. 14 0.2 >-20 >-15 >-8 5 45 -151 100 110 0.5 +10 +3 +3 Max. Units GHz GHz dBm dBm dBm dBm dB dBc/Hz ps mA 1. Divider will operate down to DC for square-wave input signal. 2. When operated in high power mode (pin 10 connected to ground). 3 - 26 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com MICROWAVE CORPORATION v03.0404 HMC365 GaAs HBT MMIC DIVIDE-BY-4, DC - 13.0 GHz GaAs MMIC SUB-HARMONICALLY Input Sensitivity Window17 Temperature PUMPED MIXER vs. - 25 GHz Input Sensitivity Window, T= 25 C 20 20 10 10 INPUT POWER (dBm) 0 Recommended Operating Window INPUT POWER (dBm) 0 -10 -10 Min Pin +25 C Max Pin +25 C Min Pin +85 C Max Pin +85 C Min Pin -55 C Max Pin -55 C 3 10 11 12 13 14 15 -20 -20 -30 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 INPUT FREQUENCY (GHz) -30 0 1 2 3 4 5 6 7 8 9 INPUT FREQUENCY (GHz) Output Power vs. Temperature 10 9 8 7 6 5 4 3 2 1 0 -1 -2 -3 -4 -5 0 1 2 3 4 5 6 7 8 9 INPUT FREQUENCY (GHz) SSB Phase Noise Performance, Pin= 0 dBm, T= 25 C 0 -20 -40 -60 -80 -100 -120 -140 -160 2 10 +25 C +85 C -55 C 10 11 12 13 14 15 10 3 10 4 10 5 10 6 10 7 OFFSET FREQUENCY (Hz) Output Harmonic Content, Pin= 0 dBm, T= 25 C 0 Pfeedthru 2nd Harmonic 3rd Harmonic Reverse Leakage, Pin= 0 dBm, T= 25 C 0 -10 Both Output Ports Terminated One Output Port Terminated -10 OUTPUT LEVEL (dBm) POWER LEVEL (dBm) -20 -30 -40 -50 -60 -20 -30 -40 -50 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 INPUT FREQUENCY (GHz) 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 INPUT FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com 3 - 27 FREQ. DIVIDERS - CHIP SSB PHASE NOISE (dBc/Hz) OUTPUT POWER (dBm) MICROWAVE CORPORATION v03.0404 HMC365 GaAs HBT MMIC DIVIDE-BY-4, DC - 13.0 GHz Output Voltage Waveform, Pin= 0 dBm, Fout= 882 MHz, T= 25 C 700 600 500 400 300 200 100 0 -100 -200 -300 -400 -500 -600 -700 22.7 22.9 23.1 23.3 23.5 23.7 23.9 24.1 24.3 24.5 24.7 TIME (nS) Absolute Maximum Ratings RF Input (Vcc = +5V) Vcc VLogic Storage Temperature Operating Temperature +13 dBm +5.5V Vcc -1.6V to Vcc -1.2V -65 to +150 C -55 to +85 C 3 FREQ. DIVIDERS - CHIP AMPLITUDE (mV) Typical Supply Current vs. Vcc Vcc (V) 4.75 5.0 5.25 Icc (mA) 94 110 118 Note: Divider will operate over full voltage range shown above Outline Drawing NOTES: 1. ALL DIMENSIONS IN INCHES (MILLIMETERS) 2. ALL TOLERANCES ARE 0.001 (0.025) 3. DIE THICKNESS IS 0.004 (0.100) BACKSIDE IS GROUND 4. BOND PADS ARE 0.004 (0.100) SQUARE 5. BOND PAD SPACING, CTR-CTR: 0.006 (0.150) 6. BACKSIDE METALLIZATION: GOLD 7. BOND PAD METALLIZATION: GOLD 3 - 28 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com MICROWAVE CORPORATION v03.0404 HMC365 GaAs HBT MMIC DIVIDE-BY-4, DC - 13.0 GHz Pad Description Pad Number Function Description Interface Schematic 1 IN RF Input 180 out of phase with pad 3 for differential operation. AC ground for single ended operation. 3 FREQ. DIVIDERS - CHIP 3 - 29 2 N/C Not Connected 4, 5, 6 VCC Supply Voltage 5V 0.25V can be applied to pad 4, 5, or 6. 3 IN RF Input must be DC blocked. 7, 11, 12 GND Ground: These pads are grounded. 8 OUT Divided Output 9 OUT Divided output 180 out of phase with pad 8. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com MICROWAVE CORPORATION v03.0404 HMC365 GaAs HBT MMIC DIVIDE-BY-4, DC - 13.0 GHz Pad Description (continued) Pad Number Function Description Interface Schematic 3 FREQ. DIVIDERS - CHIP 10 PWR SEL In the low power mode, the power select pin is left floating. By grounding this pin, the output power is increased by approximately 6 dB. 13 PWR DWN The power down pin is grounded for normal operation. Applying 5 volts to this pin will power down this device. 14 DISABLE The disable pin is grounded for normal operation. Applying 5 volts to this pin will disable the input buffer amplifier. Truth Table Function DISABLE PWR DWN PWR SEL Pin 14 13 5V Output Off Power Down X GND Output On Power Up High Power Output Float X X Low Power Output 10 X = State not permitted. 3 - 30 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com MICROWAVE CORPORATION v03.0404 HMC365 GaAs HBT MMIC DIVIDE-BY-4, DC - 13.0 GHz Assembly Diagrams To +5V VCC Supply (Bypassed via 10 uF Capacitor). AC coupling capacitors. AC coupling capacitors. 3 Optional AC coupled differential input. Should be AC grounded for single ended operation. Optional AC coupled differential output. For best single ended reverse leakage performance, this port should be terminated into 50 ohm. This port should be grounded for normal operation. Applying +5V to this port will disable the input buffer amplifier. This port should be grounded for normal operation. Applying +5V to this port will power down the device. For high power output, this port should be bonded to ground. For low power output, this port should be floating. Handling Precautions Follow these precautions to avoid permanent damage. Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems. Static Sensitivity: Follow ESD precautions to protect against > 250V ESD strikes. Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pick-up. General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers. Mounting The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The mounting surface should be clean and flat. Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 C and a tool temperature of 265 C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 C. DO NOT expose the chip to a temperature greater than 320 C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for attachment. Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer's schedule. Wire Bonding Ball or wedge bond with 0.025 mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal stage temperature of 150 C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on the chip and terminated on the package or substrate. All bonds should be as short as possible <0.31 mm (12 mils). For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com 3 - 31 FREQ. DIVIDERS - CHIP |
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